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Energy Loss
The principle of solid state detectors is based on the energy loss of
traversing particles. Free electron-hole pairs are generated, which move towards
opposite electrodes under the influence of an electric field.
The energy loss of heavy particles in matter was described by
H.A.BETHE2.1and F.BLOCH2.2 [3].
![\begin{displaymath}
-\frac{1}{\rho}\frac{dE}{dx}=4\pi N_{A} r^2_e m_e c^2 z^2 \f...
... \right) -\beta^2-\frac{\delta(\gamma)}{2}-\frac{C}{Z} \right]
\end{displaymath}](img67.gif) |
(2.1) |
Eq.
represents the differential energy loss per mass
surface density
,
where
is the charge of the incident particle,
,
and
are Avogadro's number, the
atomic number and the atomic mass of the material,
and
are the
electron mass and its classical radius (
).
is the maximum kinetic energy which is still
detected in the material,
is the mean excitation energy,
,
and
is a correction for the shielding
of the particle's electric field by the atomic electrons, the density effect caused
by atomic polarization. At very low incident particle energies, the basic assumption
of static atomic electrons is violated, which is taken into account by
the shell correction term
.
However, in thin layers, the deposited
energy is less than expected because a fraction of the lost energy is carried
off by energetic knock-on electrons (also known as
electrons).
These considerations lead to the restricted energy loss, which is expressed
by an additional term in the Bethe-Bloch equation [9],
![\begin{displaymath}
-\frac{1}{\rho}\frac{dE}{dx}=4\pi N_{A} r^2_e m_e c^2 z^2 \f...
...}}\right) -\frac{\delta(\gamma)}{2}-\frac{C}{Z} \right] \quad,
\end{displaymath}](img83.gif) |
(2.2) |
where
with
depending on the material
and the incident particle momentum.
Figure:
Energy deposition of pions in silicon. While the standard Bethe-Bloch
theory covers thick layers, restrictions apply to thin layers as shown for
to account for energy carried off by energetic knock-on electrons.
 |
Fig.
compares the standard Bethe-Bloch theory to the
restricted form for a pion traversing
of silicon in terms
of the incident particle momentum.
In the low energy range, there is no difference between standard and restricted
forms, since knock-on electron production is improbable.
However, in the regime of a few hundred
, there is already
considerable deviation: The standard theory predicts a minimum ionizing particle (MIP)
at
, while the restricted energy loss states
.
Moreover, the relativistic rise at high energies is quite flat in the restricted
model due to energy carried off by knock-on electrons.
The statistical fluctuation of the energy loss in thin layers was described by
L.D.LANDAU2.3 [10].
The Landau distribution resembles a distorted normal distribution with a long upper tail
due to rare, but highly ionizing knock-on electrons.
The tail of an ideal Landau distribution extends to infinite energies, which is unrealistic.
In practice, the measurement range is always limited, which leads to a truncated Landau curve.
As a result of its asymmetry, the mean energy loss is higher than the most probable (MP).
However, the latter is much easier to obtain from measured data and therefore usually
stated in experimental results. The scale factor between MP and mean is typically around 1.3
but depends on particle energy and measurement range.
With particle energies far below the MIP energy, corresponding to thick layers, knock-on electrons
are improbable, the Landau tail vanishes and thus the resulting distribution is
Gaussian2.4.
The restricted energy loss model has been confirmed by experiments, e.g. by
a dedicated test with silicon pad sensors at BNL performed in 1998 by HEPHY and
MIT, where excellent agreement between measurement and theory was found [11].
Fig.
shows the most probable energy loss of pions in the range of minimum
ionization in a silicon detector of
thickness.
Figure:
Calculated and measured most probable energy deposition
of pions in a silicon detector of
thickness, compared to the standard
Bethe-Bloch theory.
 |
The energy deposited in the detector material flows into the creation of free electron-hole
pairs. The number of pairs
depends on the total energy loss
and
the ionization energy
, which is necessary for a pair production,
 |
(2.3) |
In silicon,
, which results in an most probable charge of
about
for a MIP in
of silicon.
Different values between
and
(corresponding to a charge between
and
) are given
in literature. Within this thesis, a number of
shall be defined as the MIP charge.
Figure:
Measured MIP signal distribution
in a silicon detector of
thickness.
 |
The measured energy loss distribution of MIPs in a typical silicon sensor (
thick)
is shown in fig.
in terms of the collected charge [12].
The measured data have been fitted by a Landau distribution, convoluted with a narrow normal
distribution due to electronic noise and intrinsic detector fluctuations [13].
This results in a minor broadening of the shape and a slight increase of the peak position
compared to pure Landau. As stated in the boxes on the right, the pure Landau
,
but after convolution with a Gaussian distribution of
, the position of the
.
Since the convoluted peak is the measured property, we will implicitly refer to this value
when stating experimental MP signal values.
Fig.
also illustrates why the MP is obtained much
easier than the mean value: Cuts on either end do affect the mean, but not the MP.
The low edge depends on the pedestal threshold, and the high edge is defined by
the range of the readout electronics. Moreover, nonlinearity and saturation
occur when measuring very high signals of the tail.
More experimental results, which confirm the theory of energy loss, are found in
section
, p.
.
Next: Charge Collection
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Markus Friedl
2001-07-14