Silicon Detector Model

A simple model of charge collection in silicon detectors has been derived from the basics of semiconductor theory. It has been shown that the output signal of silicon detectors depends on various parameters like resistivity or bias voltage and approximately scales with the sensor thickness, thus demonstrating the feasibility of silicon detectors which are thicker than the canonical $300\,\rm\mu m$. The APV amplifier in combination with the deconvolution method has also been implemented in the model.